2024

▶"Systematic Analysis of Spacer and Gate Length Scaling on Memory Characteristics in 3D NAND Flash Memory" (submitted)     

▶"Analyzing the Influence of Source/Drain Growth Height and Lateral Growth Depth in FinFETs through XGBoost and SHAP" (submitted)    

▶"Innovative Programming Approaches to Address Z-Interference in High-Density 3D NAND Flash Memory" (submitted)    

▶"Improving Z-Interference and Program Disturbance in 3D NAND Flash Memory Using Asymmetric Program-Pass Voltage" (submitted)   

▶"Unveiling Parasitic Capacitance Effects and Introducing Buried Structure for Enhanced RF Performance in 2-D Channel Devices" (submitted)  

▶J. K. Park, and S. K. Hong, " A New 3-Dimensional Vertical Transistor with Channel Length Determination Using Dielectric Thickness", Electronics. 13, no. 7: 1356.

▶Jihun Kim, Nam Ki Hwang, Seul Ki Hong, Min Ju Kim and Jong Kyung Park, "Facilitating 3D Multi-Chip Integration through Low-Temperature Polymer-to-Polymer Bonding", Acs Applied Electronic Materials, 6(5), 3915-3924.

▶"Improving Cell Current in 3D NAND Flash Memory with Fixed Oxide Charge" (submitted)

▶Sang Woo Park, Seul Ki Hong, Sarah Eunkyung Kim, and Jong Kyung Park, "First Demonstration of Enhanced Cu-Cu Bonding at Low Temperature with Ruthenium Passivation Layer", IEEE Access. vol.12, 82396-82401, (2024)

▶Min Seong Jeong, Sang Woo Park, Yeon Ju Kim, Jihun Kim, Seul Ki Hong, Sarah Eunkyung Kim, and Jong Kyung Park, "Unraveling diffusion behavior in Cu-to-Cu direct bonding with metal passivation layers", Scientific Reprorts, 14, 6665 (2024). 

▶ Yeeun Kim, Seoul Ki Hong, and Jong Kyung Park, "Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory", Electronics. 13, no. 6: 1020, (2024)

▶ J. K. Park, and S. K. Hong, "Phase-Shift Controller for Analog Device Application using 2-D Material", Carbon lett. 34, 1667-1672, (2024)

2023

▶ J. K. Park, and S. K. Hong, "A Self-Aligned Process for Simultaneous Fabrication of Short Channel and Spacer in Semiconductor Devices", Journal of Semiconductor Technology and Science. 24(3), 179-183, (2023).

▶ Kim Yeon Ju, Park Sang Woo, Jung Min Seong, Kim Ji Hun and Park Jong Kyung, "A Review on the Bonding Characteristics of SiCN for Low-temperature Cu Hybrid Bonding", Journal of the Microelectronics and Packaging Society, 30(4), 8-16 (2023).

▶  T. Y, Hong, S. E. Kim, J. K. Park, and S. K. Hong, "Guidelines for Area Ratio between Metal Lines and Vias to Improve the Reliability of Interconnect  Systems in High-Density Electronic Devices" Electronics., 12(21), 4403, (2023).

2022

▶  Park, Jong Kyung, and Sarah Eunkyung Kim. 2022. "A Review of Cell Operation Algorithm for 3D NAND Flash Memory" Applied Sciences 12, no. 21: 10697. 

Prior to SeoulTech (~2021)

▶  Kim, S. Y., Park, J. K., Hwang, W. S., Lee, S. J., Lee, K. H., Pyi, S. H., & Cho, B. J. (2016). "Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory". Journal of nanoscience and nanotechnology, 16(5), 5044–5048.

▶  Park, J. K., Lee, K.-H., Pyi, S. H., Lee, S.-H., & Cho, B. J. (2014). "Improvement of the multi-level cell performance by a soft program method in flash memory devices". Solid-State Electronics, 94, 86-90.

▶ Sik Hwang, W., Remskar, M., Yan, R., Kosel, T., Kyung Park, J., Jin Cho, B., Haensch, W., Xing, H., Seabaugh, A., & Jena, D. (2013). "Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors". Applied Physics Letters, 102(4). 

▶ Park, J. K., Lee, S.-H., Oh, J. S., Lee, K.-H., Pyi, S. H., & Cho, B. J. (2012). "Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer". Applied Physics Express, 5(8), 081102. 

▶ Song, S. M., Park, J. K., Sul, O. J., & Cho, B. J. (2012). "Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance". Nano Letters, 12(8), 3887-3892.

▶ Park, J. K., Song, S. M., Mun, J. H., & Cho, B. J. (2011). "Graphene Gate Electrode for MOS Structure-Based Electronic Devices". Nano Letters, 11(12), 5383-5386. 

▶ Park, J. K., Park, Y., Lee, S.-H., Im, S. K., Oh, J. S., Joo, M. S., Hong, K., & Cho, B. J. (2011). "Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device". IEEE Transactions on Electron Devices, 58(10), 3314-3320.

▶ Park, J. K., Park, Y., Lee, S.-H., Lim, S. K., Oh, J. S., Joo, M. S., Hong, K., & Cho, B. J. (2011). "Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device". Japanese Journal of Applied Physics, 50(4S).

▶ Park, J. K., Park, Y., Song, M. H., Lim, S. K., Oh, J. S., Joo, M. S., Hong, K., & Cho, B. J. (2010). "Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device". Applied Physics Express, 3(9).

▶ Park, J. K., Park, Y., Lim, S. K., Oh, J. S., Joo, M. S., Hong, K., & Cho, B. J. (2010). "Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device". Applied Physics Letters, 96(22).

▶ Park, Y., Park, J. K., Song, M. H., Lim, S. K., Oh, J. S., Joo, M. S., Hong, K., & Cho, B. J. (2010). "Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices". Applied Physics Letters, 96(5).