▶"Improving Z-Interference and Program Disturbance in 3D NAND Flash Memory Using Asymmetric Program-Pass Voltage" (submitted)
▶"Unveiling Parasitic Capacitance Effects and Introducing Buried Structure for Enhanced RF Performance in 2-D Channel Devices" (submitted)
▶J. K. Park, and S. K. Hong, " A New 3-Dimensional Vertical Transistor with Channel Length Determination Using Dielectric Thickness", Electronics. 13, no. 7: 1356.
▶"Facilitating 3D Multi-Chip Integration through Low-Temperature Polymer-to-Polymer Bonding" (submitted)
▶"Improving Cell Current in 3D NAND Flash Memory with Fixed Oxide Charge" (submitted)
▶"Evaluation of Cu-Cu Bonding Characteristics at Low Temperatures with Ruthenium Passivation Layer" (submitted)
▶Min Seong Jeong, Sang Woo Park, Yeon Ju Kim, Jihun Kim, Seul Ki Hong, Sarah Eunkyung Kim, and Jong Kyung Park, "Unraveling diffusion behavior in Cu-to-Cu direct bonding with metal passivation layers", Scientific Reprorts, 14, 6665 (2024).
▶ Yeeun Kim, Seoul Ki Hong, and Jong Kyung Park, "Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory", Electronics. 13, no. 6: 1020.
▶ J. K. Park, and S. K. Hong, "Phase-Shift Controller for Analog Device Application using 2-D Material", Carbon lett. (Accept @ 2024.02)
▶ J. K. Park, and S. K. Hong, "A Self-Aligned Process for Simultaneous Fabrication of Short Channel and Spacer in Semiconductor Devices", Journal of Semiconductor Technology and Science. (Accept @ 2023.12)
▶ Kim Yeon Ju, Park Sang Woo, Jung Min Seong, Kim Ji Hun and Park Jong Kyung, "A Review on the Bonding Characteristics of SiCN for Low-temperature Cu Hybrid Bonding", Journal of the Microelectronics and Packaging Society, 30(4), 8-16 (2023).
▶ T. Y, Hong, S. E. Kim, J. K. Park, and S. K. Hong, "Guidelines for Area Ratio between Metal Lines and Vias to Improve the Reliability of Interconnect Systems in High-Density Electronic Devices" Electronics., 12(21), 4403, (2023).
▶ Park, Jong Kyung, and Sarah Eunkyung Kim. 2022. "A Review of Cell Operation Algorithm for 3D NAND Flash Memory" Applied Sciences 12, no. 21: 10697.
Prior to SeoulTech
▶ Kim, S. Y., Park, J. K., Hwang, W. S., Lee, S. J., Lee,
K. H., Pyi, S. H., & Cho, B. J. (2016). "Dependence of Grain Size on
the Performance of a Polysilicon Channel TFT for 3D NAND Flash
Memory". Journal of nanoscience and
nanotechnology, 16(5), 5044–5048.
▶ Park, J. K., Lee, K.-H., Pyi, S. H., Lee, S.-H., & Cho,
B. J. (2014). "Improvement of the multi-level cell performance by a soft
program method in flash memory devices". Solid-State Electronics, 94,
86-90.
▶ Sik Hwang, W., Remskar, M., Yan, R., Kosel, T.,
Kyung Park, J., Jin Cho, B., Haensch, W., Xing, H., Seabaugh, A., & Jena,
D. (2013). "Comparative study of chemically synthesized and exfoliated
multilayer MoS2 field-effect transistors". Applied Physics Letters, 102(4).
▶ Park, J. K., Lee, S.-H., Oh, J. S., Lee, K.-H.,
Pyi, S. H., & Cho, B. J. (2012). "Improvement of Charge Retention in
Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide
Blocking Layer". Applied Physics Express, 5(8),
081102.
▶ Song, S. M., Park, J. K., Sul, O. J., & Cho, B.
J. (2012). "Determination of Work Function of Graphene under a Metal
Electrode and Its Role in Contact Resistance". Nano Letters, 12(8),
3887-3892.
▶ Park, J. K., Song, S. M., Mun, J. H., & Cho, B. J.
(2011). "Graphene Gate Electrode for MOS Structure-Based Electronic
Devices". Nano Letters, 11(12), 5383-5386.
▶ Park, J. K., Park, Y., Lee, S.-H., Im, S. K., Oh,
J. S., Joo, M. S., Hong, K., & Cho, B. J. (2011).
"Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory
Device". IEEE Transactions on Electron Devices, 58(10),
3314-3320.
▶ Park, J. K., Park, Y., Lee, S.-H., Lim, S. K., Oh,
J. S., Joo, M. S., Hong, K., & Cho, B. J. (2011). "Mechanism of Date
Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in
Flash Memory Device". Japanese Journal of Applied Physics, 50(4S).
▶ Park, J. K., Park, Y., Song, M. H., Lim, S. K., Oh,
J. S., Joo, M. S., Hong, K., & Cho, B. J. (2010). "Cubic-Structured
HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device". Applied
Physics Express, 3(9).
▶ Park, J. K., Park, Y., Lim, S. K., Oh, J. S., Joo,
M. S., Hong, K., & Cho, B. J. (2010). "Improvement of memory
performance by high temperature annealing of the Al2O3 blocking layer in a
charge-trap type flash memory device". Applied Physics Letters, 96(22).
▶ Park, Y., Park, J. K., Song, M. H., Lim, S. K., Oh, J.
S., Joo, M. S., Hong, K., & Cho, B. J. (2010). "Structural and
compositional dependence of gadolinium-aluminum oxide for the application of
charge-trap-type nonvolatile memory devices". Applied Physics
Letters, 96(5).